Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Effect of material parameters on the quantum efficiency of GaInAsSb detectors | |
其他题名 | 论文其他题名 |
Tian Y.; Zhou T. M.; Zhang B. L.; Jiang H.; Jin Y. X. | |
1999 | |
发表期刊 | Solid-State Electronics
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ISSN | 0038-1101 |
卷号 | 43期号:3页码:625-631 |
摘要 | In this paper, a theoretical study of the effect of material parameters on the quantum efficiency of a homogeneous GaInAsSb infrared photovolatic detector is presented. The considerations are carried out for the near room temperature and 2.5 mu m wavelength. The calculated results show that the quantum efficiency depends strongly on the carrier concentrations in the n- and p-regions. In addition, the absorption coefficient, the surface recombination velocities and the widths of the two regions also effect the quantum efficiency. (C) 1999 Elsevier Science Ltd. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25316 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Tian Y.,Zhou T. M.,Zhang B. L.,et al. Effect of material parameters on the quantum efficiency of GaInAsSb detectors[J]. Solid-State Electronics,1999,43(3):625-631. |
APA | Tian Y.,Zhou T. M.,Zhang B. L.,Jiang H.,&Jin Y. X..(1999).Effect of material parameters on the quantum efficiency of GaInAsSb detectors.Solid-State Electronics,43(3),625-631. |
MLA | Tian Y.,et al."Effect of material parameters on the quantum efficiency of GaInAsSb detectors".Solid-State Electronics 43.3(1999):625-631. |
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