Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Laser action in ZnCdSe/ZnSe asymmetric double-quantum-well | |
其他题名 | 论文其他题名 |
Yu G. Y.; Fan X. W.; Zhang J. Y.; Yang B. J.; Zhao X. W.; Shen D. Z. | |
1999 | |
发表期刊 | Solid State Communications
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ISSN | 0038-1098 |
卷号 | 110期号:3页码:127-130 |
摘要 | Lasing from the wide well of ZnCdSe/ZnSe asymmetric double-quantum-well structures is studied. Owing to the difference of the energy levels between the wide well and the narrow well, the carriers tunnel from the narrow well to the wide well, which can influence the emission effectively. The carrier tunneling is conducive to lasing from the wide well. The threshold can be lowered by optimizing the structure. (C) 1999 Elsevier Science Ltd. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25312 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Yu G. Y.,Fan X. W.,Zhang J. Y.,et al. Laser action in ZnCdSe/ZnSe asymmetric double-quantum-well[J]. Solid State Communications,1999,110(3):127-130. |
APA | Yu G. Y.,Fan X. W.,Zhang J. Y.,Yang B. J.,Zhao X. W.,&Shen D. Z..(1999).Laser action in ZnCdSe/ZnSe asymmetric double-quantum-well.Solid State Communications,110(3),127-130. |
MLA | Yu G. Y.,et al."Laser action in ZnCdSe/ZnSe asymmetric double-quantum-well".Solid State Communications 110.3(1999):127-130. |
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