Laser action in ZnCdSe/ZnSe asymmetric double-quantum-well

	Laser action in ZnCdSe/ZnSe asymmetric double-quantum-well
其他题名	论文其他题名
	Yu G. Y.; Fan X. W.; Zhang J. Y.; Yang B. J.; Zhao X. W.; Shen D. Z.
	1999
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	110 期号:3 页码:127-130
摘要	Lasing from the wide well of ZnCdSe/ZnSe asymmetric double-quantum-well structures is studied. Owing to the difference of the energy levels between the wide well and the narrow well, the carriers tunnel from the narrow well to the wide well, which can influence the emission effectively. The carrier tunneling is conducive to lasing from the wide well. The threshold can be lowered by optimizing the structure. (C) 1999 Elsevier Science Ltd. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25312
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yu G. Y.,Fan X. W.,Zhang J. Y.,et al. Laser action in ZnCdSe/ZnSe asymmetric double-quantum-well[J]. Solid State Communications,1999,110(3):127-130.
APA	Yu G. Y.,Fan X. W.,Zhang J. Y.,Yang B. J.,Zhao X. W.,&Shen D. Z..(1999).Laser action in ZnCdSe/ZnSe asymmetric double-quantum-well.Solid State Communications,110(3),127-130.
MLA	Yu G. Y.,et al."Laser action in ZnCdSe/ZnSe asymmetric double-quantum-well".Solid State Communications 110.3(1999):127-130.