Theoretical analysis of the detectivity in N-p and P-n GaSb/GaInAsSb infrared photodetectors

	Theoretical analysis of the detectivity in N-p and P-n GaSb/GaInAsSb infrared photodetectors
其他题名	论文其他题名
	Tian Y.; Zhang B. L.; Zhou T. M.; Jiang H.; Jin Y. X.
	2000
发表期刊	Ieee Transactions on Electron Devices
ISSN	0018-9383
卷号	47 期号:3 页码:544-552
摘要	In this paper, the detectivity as well as the quantum efficiency and the zero-bias resistance-area product in N-p and P-n GaSb/Ga0.8In0.2As0.19Sb0.81 infrared detectors is analyzed, based on the incident wavelength and the parameters of GaSb and Ga0.8In0.2As0.19Sb0.81. The results show that the detectivity for the N-p structure is much higher than that for the P-n structure. In addition, the tunneling mechanism in both heterostructures strongly decreases the performance of Ga0.8In0.2As0.Sb-19(0.81)/GaSb detectors. The optimum detectivity is obtained when the zero-bias resistance-area product is limited by the generation-recombination mechanism. Furthermore, the detectivity in the N-p heterostructure is saturated with a small thickness of p-Ga0.8In0.2As0.19Sb0.81 while the one in the P-n heterostructure is maximum with the thickness of n-Ga0.8In0.2As0.19Sb0.81 in the range of 2.5-3 mu m.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25273
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Tian Y.,Zhang B. L.,Zhou T. M.,et al. Theoretical analysis of the detectivity in N-p and P-n GaSb/GaInAsSb infrared photodetectors[J]. Ieee Transactions on Electron Devices,2000,47(3):544-552.
APA	Tian Y.,Zhang B. L.,Zhou T. M.,Jiang H.,&Jin Y. X..(2000).Theoretical analysis of the detectivity in N-p and P-n GaSb/GaInAsSb infrared photodetectors.Ieee Transactions on Electron Devices,47(3),544-552.
MLA	Tian Y.,et al."Theoretical analysis of the detectivity in N-p and P-n GaSb/GaInAsSb infrared photodetectors".Ieee Transactions on Electron Devices 47.3(2000):544-552.

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