Changchun Institute of Optics,Fine Mechanics and Physics,CAS
ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition | |
其他题名 | 论文其他题名 |
Zhang J. Y.; Shen D. Z.; Fan X. W.; Yang B. J.; Zheng Z. H. | |
2000 | |
发表期刊 | Journal of Crystal Growth |
ISSN | 0022-0248 |
卷号 | 214页码:100-103 |
摘要 | Low-temperature growth of ZnBeSe epilayer on GaAs substrates has been carried out at low-pressure (LP) by photo-assisted metalorganic chemical vapor deposition (MOCVD) using a ultrahigh-pressure mercury lamp as a light source. High-temperature growth of ZnBeSe has been also achieved by LP-MOCVD without light irradiation. It was found that the full-width at half-maximum of the diffraction peak of ZnBeSe epilayer increased with increasing irradiation intensity and growth temperature. The intensity of the emission band related to the excitons was obviously reduced due to poor quality of epilayer at high irradiation intensity and the deep-level emission band was predominant in the spectra. (C) 2000 Published by Elsevier Science B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25271 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhang J. Y.,Shen D. Z.,Fan X. W.,et al. ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition[J]. Journal of Crystal Growth,2000,214:100-103. |
APA | Zhang J. Y.,Shen D. Z.,Fan X. W.,Yang B. J.,&Zheng Z. H..(2000).ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition.Journal of Crystal Growth,214,100-103. |
MLA | Zhang J. Y.,et al."ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition".Journal of Crystal Growth 214(2000):100-103. |
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