ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition

	ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition
其他题名	论文其他题名
	Zhang J. Y.; Shen D. Z.; Fan X. W.; Yang B. J.; Zheng Z. H.
	2000
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	214 页码:100-103
摘要	Low-temperature growth of ZnBeSe epilayer on GaAs substrates has been carried out at low-pressure (LP) by photo-assisted metalorganic chemical vapor deposition (MOCVD) using a ultrahigh-pressure mercury lamp as a light source. High-temperature growth of ZnBeSe has been also achieved by LP-MOCVD without light irradiation. It was found that the full-width at half-maximum of the diffraction peak of ZnBeSe epilayer increased with increasing irradiation intensity and growth temperature. The intensity of the emission band related to the excitons was obviously reduced due to poor quality of epilayer at high irradiation intensity and the deep-level emission band was predominant in the spectra. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25271
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang J. Y.,Shen D. Z.,Fan X. W.,et al. ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition[J]. Journal of Crystal Growth,2000,214:100-103.
APA	Zhang J. Y.,Shen D. Z.,Fan X. W.,Yang B. J.,&Zheng Z. H..(2000).ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition.Journal of Crystal Growth,214,100-103.
MLA	Zhang J. Y.,et al."ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition".Journal of Crystal Growth 214(2000):100-103.

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