High-power AlGaAs/GaAs broad-area lasers grown by MBE

	High-power AlGaAs/GaAs broad-area lasers grown by MBE
其他题名	论文其他题名
	Baoxue B.; Yi B.; Xin G.; Guotong D.; Dingsan G.
	2001
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	227 页码:206-209
摘要	A new broad area (BA) structure laser has been designed with a weak lateral index waveguide, an optical coupling layer and nonabsorbing windows to improve the light output properties of BA lasers. The wafer has been grown successfully by MBE and the BA stripe has been obtained mainly by an impurity-free vacancy diffusion (IFVD) technique. The prepared devices have been measured with a maximum output power of 3.2 W. A satisfactory far field (theta (parallel to)) output property is also obtained. (C) 2001 Elsevier Science B.V. All rights: reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25247
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Baoxue B.,Yi B.,Xin G.,et al. High-power AlGaAs/GaAs broad-area lasers grown by MBE[J]. Journal of Crystal Growth,2001,227:206-209.
APA	Baoxue B.,Yi B.,Xin G.,Guotong D.,&Dingsan G..(2001).High-power AlGaAs/GaAs broad-area lasers grown by MBE.Journal of Crystal Growth,227,206-209.
MLA	Baoxue B.,et al."High-power AlGaAs/GaAs broad-area lasers grown by MBE".Journal of Crystal Growth 227(2001):206-209.