Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

	Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers
其他题名	论文其他题名
	Ma C. S.; Wang L. J.; Liu S. Y.
	2001
发表期刊	Optical and Quantum Electronics
ISSN	0306-8919
卷号	33 期号:2 页码:209-223
摘要	Analysis is performed for valence band structures and some characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers lattice-matched to InP substrate. The computed results show that band offsets are functions of strain compensation instead of constants; strain compensation changes the band structures and the density of states, and hence affects the optical gain and the threshold current density. Under the condition of zero net strain, the values of the well width, cavity length and relative threshold carrier density and threshold current density are determined for realization of 1.55 mum wavelength emission.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25246
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ma C. S.,Wang L. J.,Liu S. Y.. Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers[J]. Optical and Quantum Electronics,2001,33(2):209-223.
APA	Ma C. S.,Wang L. J.,&Liu S. Y..(2001).Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers.Optical and Quantum Electronics,33(2),209-223.
MLA	Ma C. S.,et al."Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers".Optical and Quantum Electronics 33.2(2001):209-223.

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