InGaAs/InGaAsP microdisk lasers grown by GSMBE

	InGaAs/InGaAsP microdisk lasers grown by GSMBE
其他题名	论文其他题名
	Wu G. Z.; Wang X. H.; Zheng Q.; Ren D. C.; Zhang X. D.
	2001
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	227 页码:343-345
摘要	Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 80 Angstrom /50 Angstrom InGaAs/InGaAsP multiple quantum wells structures grown by gas-source molecular beam epitaxy. We have achieved optically pumped InGaAs/InGaAsP multiquantum Wells microdisk lasers at a pump power threshold of P-th = 150 muW at pump wavelength lambda = 514.5 nm, which was measured for a 10 mum-diameter disk with lasing emission wavelength near lambda = 1.6 mum. (C) 2001 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25234
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wu G. Z.,Wang X. H.,Zheng Q.,et al. InGaAs/InGaAsP microdisk lasers grown by GSMBE[J]. Journal of Crystal Growth,2001,227:343-345.
APA	Wu G. Z.,Wang X. H.,Zheng Q.,Ren D. C.,&Zhang X. D..(2001).InGaAs/InGaAsP microdisk lasers grown by GSMBE.Journal of Crystal Growth,227,343-345.
MLA	Wu G. Z.,et al."InGaAs/InGaAsP microdisk lasers grown by GSMBE".Journal of Crystal Growth 227(2001):343-345.