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Effects of thermal annealing on ZnO films grown by plasma enhanced chemical vapour deposition from Zn(C2H5)(2) and CO2 gas mixtures
其他题名论文其他题名
Zhi Z. Z.; Liu Y. C.; Li B. S.; Zhang X. T.; Lu Y. M.; Shen D. Z.; Fan X. W.
2003
发表期刊Journal of Physics D-Applied Physics
ISSN0022-3727
卷号36期号:6页码:719-722
摘要To improve ZnO thin film quality, the ZnO thin films grown on silicon (100) by plasma enhanced chemical vapour deposition from Zn(C2H5)(2) and CO2 gas mixtures at a low temperature of 120degreesC are annealed in an oxygen ambient at temperature ranging from 600degreesC to 1000degreesC. X-ray diffraction spectra indicate that ZnO films possess a polycrystalline hexagonal wurtzite structure. Atomic force microscopy results show an increase of ZnO grain size with the increase of annealing temperature. The photoluminescence is closely related to the annealing temperature. The free exciton binding energy deduced from the temperature-dependent PL spectra is about 59 meV for the ZnO film annealed at 900degreesC, suggesting that the film quality can be improved by annealing process.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25125
专题中科院长春光机所知识产出
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Zhi Z. Z.,Liu Y. C.,Li B. S.,et al. Effects of thermal annealing on ZnO films grown by plasma enhanced chemical vapour deposition from Zn(C2H5)(2) and CO2 gas mixtures[J]. Journal of Physics D-Applied Physics,2003,36(6):719-722.
APA Zhi Z. Z..,Liu Y. C..,Li B. S..,Zhang X. T..,Lu Y. M..,...&Fan X. W..(2003).Effects of thermal annealing on ZnO films grown by plasma enhanced chemical vapour deposition from Zn(C2H5)(2) and CO2 gas mixtures.Journal of Physics D-Applied Physics,36(6),719-722.
MLA Zhi Z. Z.,et al."Effects of thermal annealing on ZnO films grown by plasma enhanced chemical vapour deposition from Zn(C2H5)(2) and CO2 gas mixtures".Journal of Physics D-Applied Physics 36.6(2003):719-722.
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