Comparative study of properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 films grown by low-pressure metal organic chemical vapour deposition

	Comparative study of properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 films grown by low-pressure metal organic chemical vapour deposition
其他题名	论文其他题名
	Zhao B. J.; Yang H. J.; Du G. T.; Miao G. Q.; Yang T. P.; Zhang Y. T.; Gao Z. M.; Wang J. Z.; Fang X. J.; Liu D. L.; Li W. C.; Ma Y.; Yang X. T.; Liu B. Y.
	2003
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	20 期号:11 页码:2045-2048
摘要	ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al2O3 films and c-Al2O3 substrates, The structure and optical properties of the ZnO/GaN/Al2O3 and ZnO/Al2O3 films have been investigated to determine the differences between the two substrates. ZnO films on GaN/Al2O3 show very strong emission features associated with exciton transitions, just as ZnO films on Al2O3, while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al2O3 substrates. Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al2O3 films are investigated and compared by x-ray photoelectron spectroscopy. According to the statistical results, the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25113
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao B. J.,Yang H. J.,Du G. T.,et al. Comparative study of properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 films grown by low-pressure metal organic chemical vapour deposition[J]. Chinese Physics Letters,2003,20(11):2045-2048.
APA	Zhao B. J..,Yang H. J..,Du G. T..,Miao G. Q..,Yang T. P..,...&Liu B. Y..(2003).Comparative study of properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 films grown by low-pressure metal organic chemical vapour deposition.Chinese Physics Letters,20(11),2045-2048.
MLA	Zhao B. J.,et al."Comparative study of properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 films grown by low-pressure metal organic chemical vapour deposition".Chinese Physics Letters 20.11(2003):2045-2048.

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