Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Comparative study of properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 films grown by low-pressure metal organic chemical vapour deposition | |
其他题名 | 论文其他题名 |
Zhao B. J.; Yang H. J.; Du G. T.; Miao G. Q.; Yang T. P.; Zhang Y. T.; Gao Z. M.; Wang J. Z.; Fang X. J.; Liu D. L.; Li W. C.; Ma Y.; Yang X. T.; Liu B. Y. | |
2003 | |
发表期刊 | Chinese Physics Letters |
ISSN | 0256-307X |
卷号 | 20期号:11页码:2045-2048 |
摘要 | ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al2O3 films and c-Al2O3 substrates, The structure and optical properties of the ZnO/GaN/Al2O3 and ZnO/Al2O3 films have been investigated to determine the differences between the two substrates. ZnO films on GaN/Al2O3 show very strong emission features associated with exciton transitions, just as ZnO films on Al2O3, while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al2O3 substrates. Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al2O3 films are investigated and compared by x-ray photoelectron spectroscopy. According to the statistical results, the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25113 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhao B. J.,Yang H. J.,Du G. T.,et al. Comparative study of properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 films grown by low-pressure metal organic chemical vapour deposition[J]. Chinese Physics Letters,2003,20(11):2045-2048. |
APA | Zhao B. J..,Yang H. J..,Du G. T..,Miao G. Q..,Yang T. P..,...&Liu B. Y..(2003).Comparative study of properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 films grown by low-pressure metal organic chemical vapour deposition.Chinese Physics Letters,20(11),2045-2048. |
MLA | Zhao B. J.,et al."Comparative study of properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 films grown by low-pressure metal organic chemical vapour deposition".Chinese Physics Letters 20.11(2003):2045-2048. |
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