Effects of RF power on properties of ZnO thin films grown on Si(001) substrate by plasma enhanced chemical vapor deposition

	Effects of RF power on properties of ZnO thin films grown on Si(001) substrate by plasma enhanced chemical vapor deposition
其他题名	论文其他题名
	Li B. S.; Liu Y. C.; Shen D. Z.; Zhang J. Y.; Lu Y. M.; Fan X. W.
	2003
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	249 期号:1—2 页码:179-185
摘要	ZnO thin films have been grown on Si(I 0 0) substrate by plasma enhanced chemical vapor deposition (PECVD) using a zinc organic source (DEZ) and carbon dioxide (M) gas mixture at a low temperature. It is demonstrated that the radio frequency (RF) plasma power can dramatically effect the properties of ZnO thin films. The quality of ZnO thin films was studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectra (PL). Under the optimized condition of RF power of 19 W, a c-axis-orientated wurtize structure ZnO thin film with the XRD full-width at half-maximum (FWHM) of 0.21degrees was prepared, and a strong free excitonic emission with a narrow PL FWHM of 90 meV at 3.286 eV was observed. The origin of the UV band is the free exciton recombination, as verified by temperature dependent PL spectra. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25110
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li B. S.,Liu Y. C.,Shen D. Z.,et al. Effects of RF power on properties of ZnO thin films grown on Si(001) substrate by plasma enhanced chemical vapor deposition[J]. Journal of Crystal Growth,2003,249(1—2):179-185.
APA	Li B. S.,Liu Y. C.,Shen D. Z.,Zhang J. Y.,Lu Y. M.,&Fan X. W..(2003).Effects of RF power on properties of ZnO thin films grown on Si(001) substrate by plasma enhanced chemical vapor deposition.Journal of Crystal Growth,249(1—2),179-185.
MLA	Li B. S.,et al."Effects of RF power on properties of ZnO thin films grown on Si(001) substrate by plasma enhanced chemical vapor deposition".Journal of Crystal Growth 249.1—2(2003):179-185.

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