Changchun Institute of Optics,Fine Mechanics and Physics,CAS
A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics | |
其他题名 | 论文其他题名 |
Yan C. L.; Ning Y. Q.; Qin L.; Zhang S. M.; Wang Q.; Zhao L. M.; Jin Z. H.; Sun Y. F.; Tao G. T.; Liu Y.; Chu G. Q.; Wang L. J.; Jiang H. L. | |
2004 | |
发表期刊 | Semiconductor Science and Technology |
ISSN | 0268-1242 |
卷号 | 19期号:6页码:685-689 |
摘要 | A high power bottom-emitting InGaAs/GaAsP vertical-cavity surface-emitting laser with a large aperture (400 mum diameter) is described. The device has been fabricated by using oxidation confinement technology. The device threshold current is 6 10 mA, and the maximum output power is up to the watt regime (1.42 W) at room temperature (24 degreesC) with a pulse condition (pulse width of 50 mus, repetition rate of 1 kHz). The maximum continuous wave optical output power at room temperature is as high as 1.09 W. The lasing peak wavelength is 987 nm, the full width at half-maximum is 0.9 nm, and the far-field divergence angle is below 10degrees. The temperature characteristics of the device are also obtained. A special temperature dependence of the threshold current in the vertical-cavity surface-emitting laser structure is observed; the characteristic temperature T-0 is over 220 K, and the wavelength shift with temperature is only about 0.06 nm K-1. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25106 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Yan C. L.,Ning Y. Q.,Qin L.,et al. A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics[J]. Semiconductor Science and Technology,2004,19(6):685-689. |
APA | Yan C. L..,Ning Y. Q..,Qin L..,Zhang S. M..,Wang Q..,...&Jiang H. L..(2004).A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics.Semiconductor Science and Technology,19(6),685-689. |
MLA | Yan C. L.,et al."A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics".Semiconductor Science and Technology 19.6(2004):685-689. |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Yan-2004-A high powe(100KB) | 开放获取 | -- | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论