Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector | |
其他题名 | 论文其他题名 |
Jun L.; Hang S.; Jin Y. X.; Hong J.; Miao G. Q.; Zhao H. F. | |
2004 | |
发表期刊 | Semiconductor Science and Technology |
ISSN | 0268-1242 |
卷号 | 19期号:6页码:690-694 |
摘要 | A resonant-cavity-enhanced (RCE) PIN photodetector has high bandwidth and high sensitivity compared with traditional PIN photodetectors. In this paper, the structure of a RCE GaInAsSb/GaSb photodetector has been designed so that the light is incident from the substrate. The top reflector for this structure is made of 9.5-15.5 periods of InAs/GaSb quarter wave stacks (QWS) and the bottom reflector is composed of three periods of SiO2/Si QWS. An antireflection coating with more than 99% transmissivity is deposited on the substrate surface. A simulation shows that the quantum efficiency could be more than 90% at the operating wavelength 2.4 mum. The device has two spectral response peaks, which could make the device function as a double-colour detector. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25103 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Jun L.,Hang S.,Jin Y. X.,et al. Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector[J]. Semiconductor Science and Technology,2004,19(6):690-694. |
APA | Jun L.,Hang S.,Jin Y. X.,Hong J.,Miao G. Q.,&Zhao H. F..(2004).Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector.Semiconductor Science and Technology,19(6),690-694. |
MLA | Jun L.,et al."Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector".Semiconductor Science and Technology 19.6(2004):690-694. |
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