Photoluminescence of F-passivated ZnO nanocrystalline films made from thermally oxidized ZnF2 films

	Photoluminescence of F-passivated ZnO nanocrystalline films made from thermally oxidized ZnF2 films
其他题名	论文其他题名
	Xu H. Y.; Liu Y. C.; Ma J. G.; Luo Y. M.; Lu Y. M.; Shen D. Z.; Zhang J. Y.; Fan X. W.; Mu R.
	2004
发表期刊	Journal of Physics-Condensed Matter
ISSN	0953-8984
卷号	16 期号:28 页码:5143-5150
摘要	F-passivated ZnO nanocrystalline films were prepared by thermal oxidation of ZnF2 films. ZnF2 films were deposited on a Si wafer by the electron beam evaporation technique. X-ray diffraction and x-ray photoelectron spectroscopy were used to study the structural changes of ZnF2 as a function of oxidation temperature. When the ZnF2 film was oxidized at 400degreesC for 30 min, a polycrystalline hexagonal wurtzite structure of ZnO:F was obtained. The room temperature photoluminescence spectrum of the ZnO:F film showed a strong near band edge ultraviolet emission located at 379 nm with a narrow linewidth of 70 meV and a very weak visible emission associated with deep level defects. The results demonstrated that the presence of residual F ions in ZnO nanocrystalline film can dramatically decrease the visible emission and increase the ultraviolet emission of ZnO. On the basis of the experimental findings, two possible mechanisms are proposed: (1) the residual F ions in the film occupy the lattice sites of Vo* centres (the oxygen vacancies with one electron) inside the ZnO nanocrystals, which results in an appreciable decrease in visible emission and (2) some of the F ions also passivate ZnO nanocrystal surface states, which prevents the holes in the valence band from being trapped in surface states and then tunnelling back into nanocrystals to combine with Vo* to form Vo** centres (Vo* + h --> Vo**) which are another source of visible emission.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25091
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xu H. Y.,Liu Y. C.,Ma J. G.,et al. Photoluminescence of F-passivated ZnO nanocrystalline films made from thermally oxidized ZnF2 films[J]. Journal of Physics-Condensed Matter,2004,16(28):5143-5150.
APA	Xu H. Y..,Liu Y. C..,Ma J. G..,Luo Y. M..,Lu Y. M..,...&Mu R..(2004).Photoluminescence of F-passivated ZnO nanocrystalline films made from thermally oxidized ZnF2 films.Journal of Physics-Condensed Matter,16(28),5143-5150.
MLA	Xu H. Y.,et al."Photoluminescence of F-passivated ZnO nanocrystalline films made from thermally oxidized ZnF2 films".Journal of Physics-Condensed Matter 16.28(2004):5143-5150.

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