High oriented FeSe thin film on GaAs(100) substrate prepared by low-pressure metalorganic chemical vapor deposition

	High oriented FeSe thin film on GaAs(100) substrate prepared by low-pressure metalorganic chemical vapor deposition
其他题名	论文其他题名
	Feng Q. J.; Shen D. Z.; Zhang J. Y.; Shan C. X.; Lu Y. M.; Liu Y. C.; Fan X. W.
	2004
发表期刊	Journal of Magnetism and Magnetic Materials
ISSN	0304-8853
卷号	279 期号:2—3 页码:435-439
摘要	High oriented FeSe thin films have been grown on GaAs(l 00) substrate at temperature 320degreesC using low-pressure metalorganic chemical vapor deposition equipment. X-ray diffraction analysis showed that high oriented FeSe thin films with the tetragonal structure were obtained. Atomic molar ratio of Fe/Se is about 1:1 by the measurement of energy dispersive spectrometer in SEM and both of Fe 2p and Se 3d binding energy were obtained by X-ray photoelectron spectroscopy. Moreover, images of atomic force microscopy reveal a surface morphology consisting of about 130 nm uniform granular film. (C) 2004 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25088
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Feng Q. J.,Shen D. Z.,Zhang J. Y.,et al. High oriented FeSe thin film on GaAs(100) substrate prepared by low-pressure metalorganic chemical vapor deposition[J]. Journal of Magnetism and Magnetic Materials,2004,279(2—3):435-439.
APA	Feng Q. J..,Shen D. Z..,Zhang J. Y..,Shan C. X..,Lu Y. M..,...&Fan X. W..(2004).High oriented FeSe thin film on GaAs(100) substrate prepared by low-pressure metalorganic chemical vapor deposition.Journal of Magnetism and Magnetic Materials,279(2—3),435-439.
MLA	Feng Q. J.,et al."High oriented FeSe thin film on GaAs(100) substrate prepared by low-pressure metalorganic chemical vapor deposition".Journal of Magnetism and Magnetic Materials 279.2—3(2004):435-439.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Feng-2004-High orien（260KB）			开放获取	--	浏览请求全文