The photoluminescence properties of ZnO : N films fabricated by thermally oxidizing Zn3N2 films using plasma-assisted metal-organic chemical vapour deposition

	The photoluminescence properties of ZnO : N films fabricated by thermally oxidizing Zn3N2 films using plasma-assisted metal-organic chemical vapour deposition
其他题名	论文其他题名
	Wang D.; Liu Y. C.; Mu R.; Zhang J. Y.; Lu Y. M.; Shen D. Z.; Fan X. W.
	2004
发表期刊	Journal of Physics-Condensed Matter
ISSN	0953-8984
卷号	16 期号:25 页码:4635-4642
摘要	Nitrogen doped ZnO films are directly fabricated by the thermal oxidation of Zn3N2 films. Zn3N2 films are prepared by plasma-assisted metal-organic chemical vapour deposition (PA-MOCVD). By comparing with undoped ZnO photoluminescence spectra, a much stronger bound exciton emission due to a neutral nitrogen acceptor (A(0)X) is observed at low temperature. The neutral acceptor level is located at 130 meV above the valence band maximum. To demonstrate the quality of ZnO:N thin films as a p-type, a Zn3N2/n-Si heterojunction structure was first fabricated. With an increase of oxidation temperature, the structure has gradually shown p-n junction rectification characteristics from I-V measurements.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25074
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang D.,Liu Y. C.,Mu R.,et al. The photoluminescence properties of ZnO : N films fabricated by thermally oxidizing Zn3N2 films using plasma-assisted metal-organic chemical vapour deposition[J]. Journal of Physics-Condensed Matter,2004,16(25):4635-4642.
APA	Wang D..,Liu Y. C..,Mu R..,Zhang J. Y..,Lu Y. M..,...&Fan X. W..(2004).The photoluminescence properties of ZnO : N films fabricated by thermally oxidizing Zn3N2 films using plasma-assisted metal-organic chemical vapour deposition.Journal of Physics-Condensed Matter,16(25),4635-4642.
MLA	Wang D.,et al."The photoluminescence properties of ZnO : N films fabricated by thermally oxidizing Zn3N2 films using plasma-assisted metal-organic chemical vapour deposition".Journal of Physics-Condensed Matter 16.25(2004):4635-4642.

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