MOVPE growth of ZnSe films on ZnO/Si templates

	MOVPE growth of ZnSe films on ZnO/Si templates
其他题名	论文其他题名
	Wang X. H.; Fan X. W.; Shan C. X.; Zhang Z. Z.; Zhang J. Y.; Lu Y. M.; Liu Y. C.; Shen D. Z.; Su Y. K.; Chang S. J.
	2004
发表期刊	Materials Chemistry and Physics
ISSN	0254-0584
卷号	88 期号:1 页码:102-105
摘要	We report the growth and characterization of ZnSe films prepared on ZnO/Si(1 1 1) templates. It was found that the as-deposited ZnSe films are highly oriented with zinc blende structure, and the preferred crystal orientation is (1 1 1). The small X-ray diffraction (XRD) full-wide-half-maximum (FWHM) also suggests that the crystal quality of the deposited ZnSe films is reasonably good. From temperature dependent photoluminescence (PL) measurements, it was found that exciton binding energy, E-B, equals 25.6 meV for the as-prepared ZnSe/ZnO/Si(1 1 1) samples. (C) 2004 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25038
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X. H.,Fan X. W.,Shan C. X.,et al. MOVPE growth of ZnSe films on ZnO/Si templates[J]. Materials Chemistry and Physics,2004,88(1):102-105.
APA	Wang X. H..,Fan X. W..,Shan C. X..,Zhang Z. Z..,Zhang J. Y..,...&Chang S. J..(2004).MOVPE growth of ZnSe films on ZnO/Si templates.Materials Chemistry and Physics,88(1),102-105.
MLA	Wang X. H.,et al."MOVPE growth of ZnSe films on ZnO/Si templates".Materials Chemistry and Physics 88.1(2004):102-105.

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