We report the growth and characterization of ZnSe films prepared on ZnO-Si(111) templates. It was found that the as-deposited ZnSe films were highly oriented with zinc blende structure and a preferred (111) crystal orientation. It was also found that quality of ZnSe epitaxial layers depends on the ZnO annealing conditions. With a 1 h 1000degreesC ZnO annealing, we could achieve a ZnSe/ZnO-Si(111) sample with a 53 meV room temperature (room temperature) photoluminescence (PL) full-width-half-maximum (FWHM). (C) 2003 Elsevier B.V. All rights reserved.
Wang X. H.,Fan X. W.,Shan C. X.,et al. Growth of ZnSe films on ZnO-Si templates[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,2004,107(1):84-88.
APA
Wang X. H..,Fan X. W..,Shan C. X..,Zhang Z. Z..,Su W..,...&Shen D. Z..(2004).Growth of ZnSe films on ZnO-Si templates.Materials Science and Engineering B-Solid State Materials for Advanced Technology,107(1),84-88.
MLA
Wang X. H.,et al."Growth of ZnSe films on ZnO-Si templates".Materials Science and Engineering B-Solid State Materials for Advanced Technology 107.1(2004):84-88.
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