Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well

	Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well
其他题名	论文其他题名
	Cao L. X.; Huang S. H.; Lu S. Z.; Lin J. L.
	2005
发表期刊	Journal of Colloid and Interface Science
ISSN	0021-9797
卷号	284 期号:2 页码:516-520
摘要	ZnS/CdS/ZnS quantum dot quantum well was prepared. The optical properties of ZnS/CdS/ZnS QDQW with different thickness of US well and ZnS shell were studied, Absorption spectra, emission spectra, and luminescence lifetimes were measured. The observed luminescence was assigned to the bulk donor-acceptor pair recombination of CdS and can be enhanced by increasing the thickness of the CdS well or coating an appropriate thickness of ZnS shell on the surface of the US well. The luminescence enhancement was caused by the relative reduce in the surface effect. The luminescence lifetimes were influenced strongly by the surface state. (c) 2005 Elsevier Inc. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24975
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Cao L. X.,Huang S. H.,Lu S. Z.,et al. Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well[J]. Journal of Colloid and Interface Science,2005,284(2):516-520.
APA	Cao L. X.,Huang S. H.,Lu S. Z.,&Lin J. L..(2005).Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well.Journal of Colloid and Interface Science,284(2),516-520.
MLA	Cao L. X.,et al."Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well".Journal of Colloid and Interface Science 284.2(2005):516-520.

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