Effect of interface on luminescence properties in ZnO/MgZnO heterostructures

	Effect of interface on luminescence properties in ZnO/MgZnO heterostructures
其他题名	论文其他题名
	Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W.
	2006
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	119 页码:551-555
摘要	A set of ZnO/MgZnO heterostructures with well widths, L-w varying from 2 to 20nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton, while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness, the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24964
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wei Z. P.,Lu Y. M.,Shen D. Z.,et al. Effect of interface on luminescence properties in ZnO/MgZnO heterostructures[J]. Journal of Luminescence,2006,119:551-555.
APA	Wei Z. P..,Lu Y. M..,Shen D. Z..,Wu C. X..,Zhang Z. Z..,...&Fan X. W..(2006).Effect of interface on luminescence properties in ZnO/MgZnO heterostructures.Journal of Luminescence,119,551-555.
MLA	Wei Z. P.,et al."Effect of interface on luminescence properties in ZnO/MgZnO heterostructures".Journal of Luminescence 119(2006):551-555.

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