Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Zn0.76Mg0.24O homojunction photodiode for ultraviolet detection | |
其他题名 | 论文其他题名 |
Liu K. W.; Shen D. Z.; Shan C. X.; Zhang J. Y.; Yao B.; Zhao D. X.; Lu Y. M.; Fan X. W. | |
2007 | |
发表期刊 | Applied Physics Letters |
ISSN | 0003-6951 |
卷号 | 91期号:20 |
摘要 | Zn0.76Mg0.24O p-n photodiode was fabricated on (0001) Al2O3 substrate by plasma-assisted molecular beam epitaxy. Ni/Au and In metals deposited using vacuum evaporation were used as p-type and n-type contacts, respectively. Current-voltage measurements on the device showed weak rectifying behavior. The photodetectors exhibited a peak responsivity at around 325 nm. The ultraviolet-visible rejection ratio (R325 nm/R400 nm) of four orders of magnitude was obtained at 6 V bias. The photodetector showed fast photoresponse with a rise time of 10 ns and fall time of 150 ns. In addition, the thermally limited detectivity was calculated as 1.8x10(10) cm Hz(1/2)/W at 325 nm, which corresponds to a noise equivalent power of 8.4x10(-12) W/Hz(1/2) at room temperature. (c) 2007 American Institute of Physics. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/24869 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Liu K. W.,Shen D. Z.,Shan C. X.,et al. Zn0.76Mg0.24O homojunction photodiode for ultraviolet detection[J]. Applied Physics Letters,2007,91(20). |
APA | Liu K. W..,Shen D. Z..,Shan C. X..,Zhang J. Y..,Yao B..,...&Fan X. W..(2007).Zn0.76Mg0.24O homojunction photodiode for ultraviolet detection.Applied Physics Letters,91(20). |
MLA | Liu K. W.,et al."Zn0.76Mg0.24O homojunction photodiode for ultraviolet detection".Applied Physics Letters 91.20(2007). |
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