Aligned ultra-long single-crystalline alpha-Si(3)N(4) nanowires

	Aligned ultra-long single-crystalline alpha-Si(3)N(4) nanowires
其他题名	论文其他题名
	Gao F. M.; Yang W. Y.; Fan Y.; An L. N.
	2008
发表期刊	Nanotechnology
ISSN	0957-4484
卷号	19 期号:10
摘要	We report the synthesis of aligned ultra-long single-crystalline alpha-Si(3)N(4) nanowires by pyrolysis of a polymeric precursor without any template. The length of the wires is up to several centimeters, which is significantly longer than that of any Si(3)N(4) wires reported previously. Microscopy characterization reveals that the wires are single crystals, with a uniform diameter of similar to 200 nm. Intense visible photoluminescence was observed between 1.3 and 3.7 eV. The wires could be useful in the fabrication of optoelectronic nanodevices and nanocomposites.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24818
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Gao F. M.,Yang W. Y.,Fan Y.,et al. Aligned ultra-long single-crystalline alpha-Si(3)N(4) nanowires[J]. Nanotechnology,2008,19(10).
APA	Gao F. M.,Yang W. Y.,Fan Y.,&An L. N..(2008).Aligned ultra-long single-crystalline alpha-Si(3)N(4) nanowires.Nanotechnology,19(10).
MLA	Gao F. M.,et al."Aligned ultra-long single-crystalline alpha-Si(3)N(4) nanowires".Nanotechnology 19.10(2008).