Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes

	Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes
其他题名	论文其他题名
	Fang F.; Zhao D. X.; Li B. H.; Zhang Z. Z.; Shen D. Z.
	2010
发表期刊	Physical Chemistry Chemical Physics
ISSN	1463-9076
卷号	12 期号:25 页码:6759-6762
摘要	Through a facile low-temperature solution process, vertically n-type ZnO nanorod arrays were grown on a GaN film to form a n-ZnO nanorod/p-GaN film heterojunction. A study of the electroluminescence (EL) characteristics of the heterojunction in air and in air with 2000 ppm hydrogen revealed the sensitivity of such a device to the surrounding atmosphere. The additional hydrogen shallow donors increased the effective electron concentration in ZnO nanorods and the EL recombination zone changed from the ZnO nanorods to the GaN film, which can be identified visually from the color change.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24760
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Fang F.,Zhao D. X.,Li B. H.,et al. Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes[J]. Physical Chemistry Chemical Physics,2010,12(25):6759-6762.
APA	Fang F.,Zhao D. X.,Li B. H.,Zhang Z. Z.,&Shen D. Z..(2010).Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes.Physical Chemistry Chemical Physics,12(25),6759-6762.
MLA	Fang F.,et al."Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes".Physical Chemistry Chemical Physics 12.25(2010):6759-6762.

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