MgZnO/ZnO p-n junction UV photodetector fabricated on sapphire substrate by plasma-assisted molecular beam epitaxy

	MgZnO/ZnO p-n junction UV photodetector fabricated on sapphire substrate by plasma-assisted molecular beam epitaxy
其他题名	论文其他题名
	Liu W. W.; Yao B.; Li B. H.; Li Y. F.; Zheng J.; Zhang Z. Z.; Shan C. X.; Zhang J. Y.; Shen D. Z.; Fan X. W.
	2010
发表期刊	Solid State Sciences
ISSN	1293-2558
卷号	12 期号:9 页码:1567-1569
摘要	We have investigated the spectral response of back- and front-surface-illumination MgZnO/ZnO p-n ultraviolet photodetector fabricated by plasma-assisted molecular beam epitaxy on sapphire substrate. The current-voltage measurements show that the device has a rectifying behavior with a turn-on voltage of 4.5 V. The detector exhibits a broad spectral response which covers the visible and UV spectra regions (from 275 to 375 nm) and has a maximum peak response at the wavelength of 330 nm. At a reverse bias of 5 V. the visible rejection (R330 nm/R500 nm) was more than two orders of magnitude. The peak responsivity at 330 nm for the device under back-illumination is about four times larger than that of the device under front-illumination under the same reverse bias. The response mechanisms of the device under back- and front-illumination are discussed. (C) 2010 Elsevier Masson SAS. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24748
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu W. W.,Yao B.,Li B. H.,et al. MgZnO/ZnO p-n junction UV photodetector fabricated on sapphire substrate by plasma-assisted molecular beam epitaxy[J]. Solid State Sciences,2010,12(9):1567-1569.
APA	Liu W. W..,Yao B..,Li B. H..,Li Y. F..,Zheng J..,...&Fan X. W..(2010).MgZnO/ZnO p-n junction UV photodetector fabricated on sapphire substrate by plasma-assisted molecular beam epitaxy.Solid State Sciences,12(9),1567-1569.
MLA	Liu W. W.,et al."MgZnO/ZnO p-n junction UV photodetector fabricated on sapphire substrate by plasma-assisted molecular beam epitaxy".Solid State Sciences 12.9(2010):1567-1569.

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