Tuning ferromagnetism in MgxZn1-xO thin films by band gap and defect engineering

	Tuning ferromagnetism in MgxZn1-xO thin films by band gap and defect engineering
其他题名	论文其他题名
	Li Y. F.; Deng R.; Yao B.; Xing G. Z.; Wang D. D.; Wu T.
	2010
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	97 期号:10
摘要	We investigate the room temperature ferromagnetism in band gap tunable MgxZn1-xO (x <= 0.22) alloy thin films and find that ferromagnetism is significantly enhanced in p-type MgxZn1-xO (x >= 0.17) compared with the n-type counterparts (x <= 0.15). Temperature-dependent photoluminescence measurements reveal the correlation between the p-type behavior, enhanced ferromagnetism, and zinc vacancies. First-principle calculations demonstrate that the formation energy of zinc vacancies decreases with the increasing Mg content and the zinc vacancies in MgxZn1-xO alloys stabilize the ferromagnetic coupling. Our results suggest a viable route to tune the magnetic properties of oxides through band gap and defect engineering. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3485058]
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24747
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li Y. F.,Deng R.,Yao B.,et al. Tuning ferromagnetism in MgxZn1-xO thin films by band gap and defect engineering[J]. Applied Physics Letters,2010,97(10).
APA	Li Y. F.,Deng R.,Yao B.,Xing G. Z.,Wang D. D.,&Wu T..(2010).Tuning ferromagnetism in MgxZn1-xO thin films by band gap and defect engineering.Applied Physics Letters,97(10).
MLA	Li Y. F.,et al."Tuning ferromagnetism in MgxZn1-xO thin films by band gap and defect engineering".Applied Physics Letters 97.10(2010).

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