Enhanced Responsivity of Highly Spectrum-Selective Ultraviolet Photodetectors

	Enhanced Responsivity of Highly Spectrum-Selective Ultraviolet Photodetectors
其他题名	论文其他题名
	Ni P. N.; Shan C. X.; Wang S. P.; Li B. H.; Zhang Z. Z.; Zhao D. X.; Liu L.; Shen D. Z.
	2012
发表期刊	Journal of Physical Chemistry C
ISSN	1932-7447
卷号	116 期号:1 页码:1350-1353
摘要	Highly spectrum-selective photo de tectors have been proposed and fabricated from the i-ZnO/n-ZnO structure. In this structure, the n-ZnO layer acts as a "filter" that filtrates out the short-wavelength photons to ensure the high spectrum selectivity of the photodetector. Meanwhile, the i-ZnO layer acts as a "multiplier" in which photogenerated carriers can be multiplied via an impact ionization process. In this way, photodetectors with their response width of only 9 nm have been obtained, and the responsivity of the photodetectors can reach 4.91 A/W at -5 V bias, corresponding to a quantum efficiency of 1600%. The results reported in this paper may provide a general route to high-performance, highly spectrum-selective photodetectors.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24662
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ni P. N.,Shan C. X.,Wang S. P.,et al. Enhanced Responsivity of Highly Spectrum-Selective Ultraviolet Photodetectors[J]. Journal of Physical Chemistry C,2012,116(1):1350-1353.
APA	Ni P. N..,Shan C. X..,Wang S. P..,Li B. H..,Zhang Z. Z..,...&Shen D. Z..(2012).Enhanced Responsivity of Highly Spectrum-Selective Ultraviolet Photodetectors.Journal of Physical Chemistry C,116(1),1350-1353.
MLA	Ni P. N.,et al."Enhanced Responsivity of Highly Spectrum-Selective Ultraviolet Photodetectors".Journal of Physical Chemistry C 116.1(2012):1350-1353.

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