Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine

	Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine
其他题名	论文其他题名
	Wang L. D.; Su Z. S.; Wang C.
	2012
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	100 期号:21
摘要	Nonvolatile organic write-once-read-many-times memory device was demonstrated based on hexadecafluoro-copper-phthalocyanine (F16CuPc) single layer sandwiched between indium tin oxide (ITO) anode and Al cathode. The as fabricated device remains in ON state and it can be tuned to OFF state by applying a reverse bias. The ON/OFF current ratio of the device can reach up to 2.3 x 10(3). Simultaneously, the device shows long-term storage stability and long retention time in air. The ON/OFF transition is attributed to the formation and destruction of the interfacial dipole layer in the ITO/F16CuPc interface, and such a mechanism is different from previously reported ones. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4721518]
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24643
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang L. D.,Su Z. S.,Wang C.. Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine[J]. Applied Physics Letters,2012,100(21).
APA	Wang L. D.,Su Z. S.,&Wang C..(2012).Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine.Applied Physics Letters,100(21).
MLA	Wang L. D.,et al."Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine".Applied Physics Letters 100.21(2012).

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