Enhanced Responsivity of Photodetectors Realized via Impact Ionization

	Enhanced Responsivity of Photodetectors Realized via Impact Ionization
其他题名	论文其他题名
	Yu J.; Shan C. X.; Qiao Q.; Xie X. H.; Wang S. P.; Zhang Z. Z.; Shen D. Z.
	2012
发表期刊	Sensors
ISSN	1424-8220
卷号	12 期号:2 页码:1280-1287
摘要	To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24610
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yu J.,Shan C. X.,Qiao Q.,et al. Enhanced Responsivity of Photodetectors Realized via Impact Ionization[J]. Sensors,2012,12(2):1280-1287.
APA	Yu J..,Shan C. X..,Qiao Q..,Xie X. H..,Wang S. P..,...&Shen D. Z..(2012).Enhanced Responsivity of Photodetectors Realized via Impact Ionization.Sensors,12(2),1280-1287.
MLA	Yu J.,et al."Enhanced Responsivity of Photodetectors Realized via Impact Ionization".Sensors 12.2(2012):1280-1287.

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