Process for improving performance of VCSELs

	Process for improving performance of VCSELs
其他题名	论文其他题名
	Hao Y.; Zhong J.; Xie H.; Jiang X.; Zhao Y.; Wang L.
	2005
发表期刊	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
ISSN	2534177
卷号	26 期号:12 页码:2290-2293
摘要	A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers (VCSELs). The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14 m-aperture devices have a light output power higher than 10 mW and have a maximum of 12.48 mW at 29.6 mA. In addition, open-annulus-distributed holes offer bridges for current injection, so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench, and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities, and they have a maximum output power of 8 mW even at an operation temperature of up to 60C.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24570
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Hao Y.,Zhong J.,Xie H.,et al. Process for improving performance of VCSELs[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2005,26(12):2290-2293.
APA	Hao Y.,Zhong J.,Xie H.,Jiang X.,Zhao Y.,&Wang L..(2005).Process for improving performance of VCSELs.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,26(12),2290-2293.
MLA	Hao Y.,et al."Process for improving performance of VCSELs".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 26.12(2005):2290-2293.

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