Aligned ultra-long single-crystalline -Si3N4 nanowires

	Aligned ultra-long single-crystalline -Si3N4 nanowires
其他题名	论文其他题名
	Gao F.; Yang W.; Fan Y.; An L.
	2008
发表期刊	Nanotechnology
ISSN	9574484
卷号	19 期号:10
摘要	We report the synthesis of aligned ultra-long single-crystalline -Si3N4 nanowires by pyrolysis of a polymeric precursor without any template. The length of the wires is up to several centimeters, which is significantly longer than that of any Si3N 4 wires reported previously. Microscopy characterization reveals that the wires are single crystals, with a uniform diameter of 200 nm. Intense visible photoluminescence was observed between 1.3 and 3.7 eV. The wires could be useful in the fabrication of optoelectronic nanodevices and nanocomposites. IOP Publishing Ltd.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24496
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Gao F.,Yang W.,Fan Y.,et al. Aligned ultra-long single-crystalline -Si3N4 nanowires[J]. Nanotechnology,2008,19(10).
APA	Gao F.,Yang W.,Fan Y.,&An L..(2008).Aligned ultra-long single-crystalline -Si3N4 nanowires.Nanotechnology,19(10).
MLA	Gao F.,et al."Aligned ultra-long single-crystalline -Si3N4 nanowires".Nanotechnology 19.10(2008).