Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4InP grown by LP-MOCVD

	Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4InP grown by LP-MOCVD
其他题名	论文其他题名
	Liu X.; Song H.; Miao G.; Jiang H.; Cao L.; Sun X.; Li D.; Chen Y.; Li Z.
	2011
发表期刊	Solid State Communications
ISSN	381098
卷号	151 期号:12 页码:904-907
摘要	InAs0.6P0.4 epilayers grown on InP (100) substrates using two-step growth method by LP-MOCVD were investigated. A low temperature (450 C) In0.18Ga0.82As buffer layer was introduced to relax the lattice mismatch between the InAs0.6P0.4 epilayer and the InP substrate. The influence of In0.18Ga 0.82As buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4 epilayer was characterized by Scanning electron microscopy, X-ray diffraction, Hall measurements, Transmission electron microscopy and Photoluminescence. The experimental results showed that the crystalline quality of InAs 0.6P0.4 epilayers could be greatly improved by optimizing the In0.82Ga0.18As buffer layer thicknesses and the InAs0.6P0.4 epilayer's growth temperatures. It was found that, when In0.82Ga0.18As buffer layer thickness was 100 nm and InAs0.6P0.4 epilayer's growth temperature was 580 C, the InAs0.6P0.4 epilayer exhibited the best crystalline quality and properties. 2011 Elsevier Ltd. All rights reserved.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24440
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu X.,Song H.,Miao G.,et al. Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4InP grown by LP-MOCVD[J]. Solid State Communications,2011,151(12):904-907.
APA	Liu X..,Song H..,Miao G..,Jiang H..,Cao L..,...&Li Z..(2011).Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4InP grown by LP-MOCVD.Solid State Communications,151(12),904-907.
MLA	Liu X.,et al."Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4InP grown by LP-MOCVD".Solid State Communications 151.12(2011):904-907.

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