Probing into the effect of Auger recombination mechanism on zero bias resistancearea product in In1-xGaxAs detector

	Probing into the effect of Auger recombination mechanism on zero bias resistancearea product in In1-xGaxAs detector
其他题名	论文其他题名
	Chang Y.; Shi B.; Li L.; Yin J.; Gao F.; Du G.; Jin Y.
	2011
发表期刊	Solid State Communications
ISSN	381098
卷号	151 期号:24 页码:1953-1957
摘要	D* (Detectivity), an important figure of merit for photodetectors, is limited by zero bias resistancearea product (R0A). R0A is determined by Auger recombination mechanism, depending on the composition, temperature, carrier concentration and other parameters of the photodetectors. To investigate R0A of In1-xGaxAs infrared photodetectors, in this paper, theoretical analysis of Auger recombination mechanism was carried out in the room temperature, by taking CCCH, CHHL and CHHS into account. The calculated results show that there are significant influences on R0A for various parameters in both p- and n-type regions of the devices. With carrier concentration around 1017 to 1018 cm-3, R0A of 108 cm2 (n-region) and 106 cm2 (p-region) are obtained for x=0.47, when thickness and surface recombination velocity of the sample are 5 m and 100 ms, respectively 2011 Elsevier B.V. All rights reserved.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24428
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chang Y.,Shi B.,Li L.,et al. Probing into the effect of Auger recombination mechanism on zero bias resistancearea product in In1-xGaxAs detector[J]. Solid State Communications,2011,151(24):1953-1957.
APA	Chang Y..,Shi B..,Li L..,Yin J..,Gao F..,...&Jin Y..(2011).Probing into the effect of Auger recombination mechanism on zero bias resistancearea product in In1-xGaxAs detector.Solid State Communications,151(24),1953-1957.
MLA	Chang Y.,et al."Probing into the effect of Auger recombination mechanism on zero bias resistancearea product in In1-xGaxAs detector".Solid State Communications 151.24(2011):1953-1957.

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