中文版 | English

在结果中检索

CIOMP OpenIR

浏览/检索结果: 共4条，第1-4条 帮助

已选(0)清除 条数/页：   排序方式：
Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 期号: 1
作者:  Ben,Jianwei;  Sun,Xiaojuan;  Jia,Yuping;  Jiang,Ke;  Shi,Zhiming;  Wu,You;  Kai,Cuihong;  Wang,Yong;  Luo,Xuguang;  Feng,Zhe Chuan;  Li,Dabing
收藏  |  浏览/下载：293/0  |  提交时间：2019/08/21
Refractive index  AlN  Threading dislocation density  Nanoscale strain field around dislocations  
Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence 期刊论文
Materials, 2018, 卷号: 11, 期号: 6, 页码: 11
作者:  Song, Y.;  Zhang, L. G.;  Zeng, Y. G.;  Qin, L.;  Zhou, Y. L.;  Ning, Y. Q.;  Wang, L. J.
Adobe PDF(2963Kb)  |  收藏  |  浏览/下载：449/189  |  提交时间：2019/09/17
AlGaInAs quantum well  metal organic chemical vapor deposition  cathodeluminescence  thermal treatment  segregation  lasers  inp  semiconductors  dislocations  ingaalas  epitaxy  origin  band  Materials Science  
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
作者:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.;  Wang, Y.;  Wu, Y.;  Kai, C. H.;  Li, D. B.
Adobe PDF(4418Kb)  |  收藏  |  浏览/下载：415/130  |  提交时间：2019/09/17
light-emitting-diodes  screw dislocations  threading dislocations  phase  epitaxy  gan  films  algan  core  edge  generation  Chemistry  Crystallography  
The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD 期刊论文
Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 18, 页码: 4936-4942
作者:  Chen, Y. R.;  Zhang, Z. W.;  Jiang, H.;  Li, Z. M.;  Miao, G. Q.;  Song, H.
Adobe PDF(4100Kb)  |  收藏  |  浏览/下载：421/140  |  提交时间：2019/09/17
threading dislocations  nucleation layer  gan  temperature  sapphire  Materials Science  Physics