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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
浏览  |  Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：157/31  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Ultraviolet photodetectors based on wide bandgap oxide semiconductor films 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 4, 页码: 11
作者:  C.Q.Zhou;  Q.Ai;  X.Chen;  X.H.Gao;  K.W.Liu;  D.Z.Shen
浏览  |  Adobe PDF(2797Kb)  |  收藏  |  浏览/下载：126/38  |  提交时间：2020/08/24
Photodetector,ultraviolet,oxide semiconductor film,solar-blind photodetector,msm uv photodetector,thin-film,fast-response,optoelectronic properties,performance enhancement,electrical-properties,schottky contacts,crystal-structure,zno,nanowire,Physics  
1550 nm external cavity diode laser with enhanced SMSR based on polarization mismatch by grating rotation 期刊论文
Applied Optics, 2019, 卷号: 58, 期号: 19, 页码: 5213-5218
作者:  Y.Wang;  H.Wu;  X.Zhang;  J.G.Liu;  C.Chen;  Y.B.Wang;  Y.L.Zhou
浏览  |  Adobe PDF(1261Kb)  |  收藏  |  浏览/下载：195/48  |  提交时间：2020/08/24
semiconductor-laser,optical feedback,weak,regimes,single,Optics  
Quantum Confined Indium-Rich Cluster Lasers with Polarized Dual-Wavelength Output 期刊论文
Acs Photonics, 2019, 卷号: 6, 期号: 8, 页码: 1990-1995
作者:  Q.N.Yu;  M.Zheng;  H.X.Tai;  W.Lu;  Y.Shi;  J.H.Yue;  X.Zhang;  Y.Q.Ning;  J.Wu
浏览  |  Adobe PDF(2636Kb)  |  收藏  |  浏览/下载：142/51  |  提交时间：2020/08/24
InGaAs/GaAs,strains,quantum confined lasers,indium-rich clusters,dual wavelengths,polarization,surface-emitting laser,semiconductor-laser,temperature-dependence,segregation,emission,growth,si,Science & Technology - Other Topics,Materials Science,Optics,Physics  
Photoelectric Properties of N Doped MgZnO Thin Films 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 8, 页码: 956-960
作者:  P.-C.Zhao;  Z.-Z.Zhang;  B.Yao;  B.-H.Li;  X.-L.Li
caj(1183Kb)  |  收藏  |  浏览/下载：152/47  |  提交时间：2020/08/24
Thin films,Carrier mobility,II-VI semiconductors,Light emission,Magnesium,Molecular beam epitaxy,Molecular beams,Nitrogen,Photoelectricity,Sapphire,Semiconductor alloys,Semiconductor doping,Zinc oxide  
Broadband Tunable Organic Semiconductor Laser Based on Liquid Crystal/Polymer Grating 期刊论文
Zhongguo Jiguang/Chinese Journal of Lasers, 2019, 卷号: 46, 期号: 4
作者:  L.Liu;  X.Kong;  Y.Liu;  L.Xuan
浏览  |  Adobe PDF(813Kb)  |  收藏  |  浏览/下载：172/53  |  提交时间：2020/08/24
Organic lasers,Electric fields,Laser tuning,Lasers,Liquid crystals,Liquid lasers,Organic semiconductor materials,Semiconductor lasers,Tuning  
High Power White Laser Source Based on RGB Diode Laser 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 10, 页码: 1254-1260
作者:  J.-Y.Tian;  J.Zhang;  H.-Y.Peng;  W.Wang;  Y.-X.Lei;  L.-J.Wang
浏览  |  Adobe PDF(2933Kb)  |  收藏  |  浏览/下载：227/75  |  提交时间：2020/08/24
Semiconductor lasers,Color,Colorimetry,Light sources,Optical fiber coupling,Semiconductor diodes  
780 nm Diode Laser Source with Narrow Linewidth for Alkali Metal Vapor Laser Pumping 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 9, 页码: 1123-1129
作者:  J.-Y.Tian;  J.Zhang;  H.-Y.Peng;  Y.-X.Lei;  L.-J.Wang
浏览  |  Adobe PDF(3511Kb)  |  收藏  |  浏览/下载：181/59  |  提交时间：2020/08/24
Pumping (laser),Absorption spectroscopy,Bragg gratings,Diodes,Gas lasers,Linewidth,Locks (fasteners),Metals,Mirrors,Optical fibers,Semiconductor lasers  
996 nm high-power single-longitudinal-mode tapered gain-coupled distributed feedback laser diodes 期刊论文
Applied Optics, 2019, 卷号: 58, 期号: 23, 页码: 6426-6432
作者:  Y.X.Lei;  Y.Y.Chen;  F.Gao;  D.Z.Ma;  P.Jia;  H.Wu;  C.K.Ruan
浏览  |  Adobe PDF(1060Kb)  |  收藏  |  浏览/下载：184/49  |  提交时间：2020/08/24
dfb lasers,semiconductor-laser,linewidth,Optics  
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:  Z.M.Shi;  X.J.Sun;  Y.P.Jia;  X.K.Liu;  S.L.Zhang;  Z.B.Qi
浏览  |  Adobe PDF(778Kb)  |  收藏  |  浏览/下载：167/62  |  提交时间：2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics