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Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices 期刊论文
Advanced Materials, 2018, 卷号: 30, 期号: 52, 页码: 9
作者:  Liu, T.;  Xiang, D.;  Zheng, Y.;  Wang, Y. A.;  Wang, X. Y.;  Wang, L.;  He, J.;  Liu, L.;  Chen, W.
浏览  |  Adobe PDF(1999Kb)  |  收藏  |  浏览/下载:348/114  |  提交时间:2019/09/17
homogeneous p-n junctions and inverters  MoTe2/BN heterostructures  nonvolatile and programmable  photodoping in MoTe2 devices  photoresist-free  transition-metal dichalcogenides  black phosphorus  mos2  wse2  inverters  graphene  diodes  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
Two-dimensional multibit optoelectronic memory with broadband spectrum distinction 期刊论文
Nature Communications, 2018, 卷号: 9, 页码: 8
作者:  Xiang, D.;  Liu, T.;  Xu, J. L.;  Tan, J. Y.;  Hu, Z. H.;  Lei, B.;  Zheng, Y.;  Wu, J.;  Neto, A. H. C.;  Liu, L.;  Chen, W.
浏览  |  Adobe PDF(1675Kb)  |  收藏  |  浏览/下载:275/89  |  提交时间:2019/09/17
plasmonic color filters  p-n-junctions  image sensor  monolayer mos2  boron-nitride  graphene  electronics  transistors  devices  chip  Science & Technology - Other Topics