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Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
浏览  |  Adobe PDF(2881Kb)  |  收藏  |  浏览/下载：159/60  |  提交时间：2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement  
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si 期刊论文
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:  Sun, Y.;  Zhou, K.;  Feng, M. X.;  Li, Z. C.;  Zhou, Y.;  Sun, Q.;  Liu, J. P.;  Zhang, L. Q.;  Li, D. Y.;  Sun, X. J.;  Li, D. B.;  Zhang, S. M.;  Ikeda, M.;  Yang, H.
浏览  |  Adobe PDF(1095Kb)  |  收藏  |  浏览/下载：382/95  |  提交时间：2019/09/17
x-ray-diffraction  high-power  gan  dislocation  relaxation  films  Optics