中文版 | English

在结果中检索

CIOMP OpenIR

浏览/检索结果: 共81条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Understanding efficiency improvements of betavoltaic batteries based on 4H-SiC, GaN, and diamond 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 10, 页码: 8
作者:  R. Z. Zheng;  J. B. Lu;  Y. Wang;  Z. Y. Chen;  X. Zhang;  X. Y. Li;  L. Liang;  L. Qin;  Y. G. Zeng;  Y. Y. Chen and Y. M. Liu
浏览  |  Adobe PDF(3647Kb)  |  收藏  |  浏览/下载：161/61  |  提交时间：2023/06/14
Theoretical prediction of output performance of 63NiO-Si heterojunction betavoltaic cell 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 8
作者:  Y. Wang;  R. Zheng;  J. Lu;  X. Li;  Z. Chen;  X. Zhang;  Y. Zhang;  L. Liang;  Y. Zeng;  L. Qin and Y. Liu
浏览  |  Adobe PDF(2460Kb)  |  收藏  |  浏览/下载：57/34  |  提交时间：2023/06/14
Pressure-induced phase transitions in weak interlayer coupling CdPS3 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 23, 页码: 7
作者:  M. M. Niu;  H. W. Cheng;  X. L. Li;  J. Yu;  X. W. Yang;  Y. Q. Gao;  R. G. Liu;  Y. Cao;  K. Y. He;  X. J. Xie;  Q. Shen;  M. Lu;  L. Wang;  T. T. Yin and J. X. Yan
浏览  |  Adobe PDF(3385Kb)  |  收藏  |  浏览/下载：122/45  |  提交时间：2023/06/14
Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
作者:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben;  Y. Chen;  Z.-H. Zhang;  Y. Jia;  Z. Shi and D. Li
浏览  |  Adobe PDF(2688Kb)  |  收藏  |  浏览/下载：92/30  |  提交时间：2022/06/13
Super-broadband geometric phase devices based on circular polarization converter with mirror symmetry 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 10
作者:  W. Chen;  Y. Yu;  Q. Mu;  J. Campos;  Q. Wang;  S. Li;  S. Zhang and L. Xuan
浏览  |  Adobe PDF(2096Kb)  |  收藏  |  浏览/下载：97/39  |  提交时间：2022/06/13
Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
浏览  |  Adobe PDF(3040Kb)  |  收藏  |  浏览/下载：53/36  |  提交时间：2023/06/14
Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 mu m 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 14, 页码: 4
作者:  X. Li,H. Wang,Z. L. Qiao,J. X. B. Sia,W. J. Wang,X. Guo,Y. Zhang,Z. C. Niu,C. Z. Tong and C. Y. Liu
浏览  |  Adobe PDF(1524Kb)  |  收藏  |  浏览/下载：134/47  |  提交时间：2021/07/06
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
浏览  |  Adobe PDF(2009Kb)  |  收藏  |  浏览/下载：126/43  |  提交时间：2021/07/06
Ultrabroadband and independent polarization of optical amplification with InGaAs-based indium-rich cluster quantum-confined structure 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 5
作者:  M. Zheng;  Q. N. Yu;  X. Li;  H. X. Tai;  X. Zhang;  J. W. Zhang;  Y. Q. Ning and J. Wu
浏览  |  Adobe PDF(1827Kb)  |  收藏  |  浏览/下载：115/45  |  提交时间：2021/07/06
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
浏览  |  Adobe PDF(1823Kb)  |  收藏  |  浏览/下载：104/36  |  提交时间：2021/07/06