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Understanding efficiency improvements of betavoltaic batteries based on 4H-SiC, GaN, and diamond 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 10, 页码: 8
作者:  R. Z. Zheng;  J. B. Lu;  Y. Wang;  Z. Y. Chen;  X. Zhang;  X. Y. Li;  L. Liang;  L. Qin;  Y. G. Zeng;  Y. Y. Chen and Y. M. Liu
浏览  |  Adobe PDF(3647Kb)  |  收藏  |  浏览/下载：161/61  |  提交时间：2023/06/14
Pressure-induced phase transitions in weak interlayer coupling CdPS3 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 23, 页码: 7
作者:  M. M. Niu;  H. W. Cheng;  X. L. Li;  J. Yu;  X. W. Yang;  Y. Q. Gao;  R. G. Liu;  Y. Cao;  K. Y. He;  X. J. Xie;  Q. Shen;  M. Lu;  L. Wang;  T. T. Yin and J. X. Yan
浏览  |  Adobe PDF(3385Kb)  |  收藏  |  浏览/下载：122/45  |  提交时间：2023/06/14
Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
浏览  |  Adobe PDF(3040Kb)  |  收藏  |  浏览/下载：53/36  |  提交时间：2023/06/14
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
浏览  |  Adobe PDF(2009Kb)  |  收藏  |  浏览/下载：126/43  |  提交时间：2021/07/06
Ultrabroadband and independent polarization of optical amplification with InGaAs-based indium-rich cluster quantum-confined structure 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 5
作者:  M. Zheng;  Q. N. Yu;  X. Li;  H. X. Tai;  X. Zhang;  J. W. Zhang;  Y. Q. Ning and J. Wu
浏览  |  Adobe PDF(1827Kb)  |  收藏  |  浏览/下载：115/45  |  提交时间：2021/07/06
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
浏览  |  Adobe PDF(1823Kb)  |  收藏  |  浏览/下载：104/36  |  提交时间：2021/07/06
Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism 期刊论文
Applied Physics Letters, 2014, 卷号: 105, 期号: 19, 页码: 5
作者:  Chen Y. R.;  Song H.;  Jiang H.;  Li Z. M.;  Zhang Z. W.;  Sun X. J.;  Li D. B.;  Miao G. Q.
浏览  |  Adobe PDF(1846Kb)  |  收藏  |  浏览/下载：353/97  |  提交时间：2015/04/24
Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors 期刊论文
Applied Physics Letters, 2012, 卷号: 100, 期号: 12
作者:  You K.;  Jiang H.;  Li D. B.;  Sun X. J.;  Song H.;  Chen Y. R.;  Li Z. M.;  Miao G. Q.;  Liu H. B.
Adobe PDF(897Kb)  |  收藏  |  浏览/下载：664/103  |  提交时间：2012/10/21
Improvement of both efficiency and working lifetime in organic photovoltaic devices by using bathophenanthroline/tin(IV) phthalocyanine dichloride as bilayer exciton blocking layers 期刊论文
Applied Physics Letters, 2012, 卷号: 100, 期号: 24
作者:  Zhuang T. J.;  Su Z. S.;  Liu Y. D.;  Chu B.;  Li W. L.;  Wang J. B.;  Jin F. M.;  Yan X. W.;  Zhao B.;  Zhang F.;  Fan D.
Adobe PDF(844Kb)  |  收藏  |  浏览/下载：674/166  |  提交时间：2012/10/21
Estimating the pressure of laser-induced plasma shockwave by stimulated Raman shift of lattice translational modes 期刊论文
Applied Physics Letters, 2012, 卷号: 101, 期号: 2
作者:  Li Z. L.;  Shan X. N.;  Li Z. W.;  Cao J. S.;  Zhou M.;  Wang Y. D.;  Men Z. W.;  Sun C. L.
Adobe PDF(861Kb)  |  收藏  |  浏览/下载：488/100  |  提交时间：2012/10/21