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Grain boundary-driven magnetism in aluminum nitride 期刊论文
Applied Physics Letters, 2022, 卷号: 36951, 期号: 121, 页码: 24
作者:  Z. Shi;  H. Zang;  X. Ma;  Y. Yang;  K. Jiang;  Y. Chen;  Y. Jia;  X. Sun and D. Li
浏览  |  Adobe PDF(4811Kb)  |  收藏  |  浏览/下载：53/36  |  提交时间：2023/06/14
Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
作者:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben;  Y. Chen;  Z.-H. Zhang;  Y. Jia;  Z. Shi and D. Li
浏览  |  Adobe PDF(2688Kb)  |  收藏  |  浏览/下载：94/32  |  提交时间：2022/06/13
Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
浏览  |  Adobe PDF(3040Kb)  |  收藏  |  浏览/下载：56/37  |  提交时间：2023/06/14
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
浏览  |  Adobe PDF(2009Kb)  |  收藏  |  浏览/下载：126/43  |  提交时间：2021/07/06
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
浏览  |  Adobe PDF(1823Kb)  |  收藏  |  浏览/下载：104/36  |  提交时间：2021/07/06
Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation 期刊论文
Applied Physics Letters, 2016, 卷号: 109, 期号: 20
作者:  Wang, D.;  D. Han;  X. B. Li;  S. Y. Xie;  N. K. Chen;  W. Q. Tian;  S. B. Zhang and H. B. Sun
浏览  |  Adobe PDF(1604Kb)  |  收藏  |  浏览/下载：279/59  |  提交时间：2017/09/11