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Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 857, 期号: 13
作者:  J. H. Yin;  D. H. Chen;  H. Yang;  Y. Liu;  D. N. Talwar;  T. L. He;  I. T. Ferguson;  K. Y. He;  L. Y. Wan and Z. C. Feng
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Speed enhancement of ultraviolet photodetector base on ZnO quantum dots by oxygen adsorption on surface defects 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
作者:  H. Ma;  K. Liu;  Z. Cheng;  Z. Zheng;  Y. Liu;  P. Zhang;  X. Chen;  D. Liu;  L. Liu and D. Shen
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A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
作者:  Y. Chen;  Y. Wu;  J. Ben;  K. Jiang;  Y. Jia;  S. Zhang;  H. Zang;  Z. Shi;  B. Duan;  X. Sun and D. Li
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AlGaN-based UV-C distributed Bragg reflector with a -cavity designed for an external cavity structure electron-beam-pumped VCSEL 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 820
作者:  Y. R. Chen, Z. W. Zhang, G. Q. Miao, H. Jiang, Z. M. Li and H. Song
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Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
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Impact of Al2O3 stress liner on two-dimensional SnS2 nanosheet for photodetector application 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 830, 页码: 7
作者:  X. K. Liu,X. H. Deng,X. H. Li,H. C. Chiu,Y. X. Chen,V. D. Botcha,M. Wang,W. J. Yu and C. H. Lin
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Performance improvement of amorphous Ga 2 O 3 ultraviolet photodetector by annealing under oxygen atmosphere 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 840, 页码: 7
作者:  C. Q. Zhou,K. W. Liu,X. Chen,J. H. Feng,J. L. Yang,Z. Z. Zhang,L. Liu,Y. Xia and D. Z. Shen
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Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 848, 页码: 10
作者:  Y. Liu,T. Y. He,D. H. Chen,H. Yang,I. T. Ferguson,D. Huang and Z. C. Feng
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Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
Adobe PDF(1681Kb)  |  收藏  |  浏览/下载:439/132  |  提交时间:2019/09/17
Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering  
Preparation of three-dimensional Ce-doped Sn3O4 hierarchical microsphere and its application on formaldehyde gas sensor 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 726
作者:  Ma, X. H.;  J. L. Shen;  D. X. Hu;  L. Sun;  Y. Chen;  M. Liu;  C. N. Li and S. P. Ruan
Adobe PDF(3592Kb)  |  收藏  |  浏览/下载:341/114  |  提交时间:2018/06/13