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AlGaN-based UV-C distributed Bragg reflector with a -cavity designed for an external cavity structure electron-beam-pumped VCSEL 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 820
作者:  Y. R. Chen, Z. W. Zhang, G. Q. Miao, H. Jiang, Z. M. Li and H. Song
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Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
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Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering