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Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction 期刊论文
Crystengcomm, 2022, 卷号: 24, 期号: 38, 页码: 6642-6653
作者:  X. J. Liu;  M. S. Liu;  R. D. Zhu;  B. H. Li;  P. Wan;  D. N. Shi;  C. X. Kan and M. M. Jiang
浏览  |  Adobe PDF(3316Kb)  |  收藏  |  浏览/下载：122/41  |  提交时间：2023/06/14
Yolk-shell structured Bi2SiO5:Yb3+,Ln(3+) (Ln = Er, Ho, Tm) upconversion nanophosphors for optical thermometry and solid-state lighting 期刊论文
Crystengcomm, 2020, 卷号: 22, 期号: 26, 页码: 4438-4448
作者:  D. X. Chen;  L. L. Zhang;  Y. J. Liang;  W. L. Wang;  S. Yan;  J. Q. Bi and K. N. Sun
浏览  |  Adobe PDF(4133Kb)  |  收藏  |  浏览/下载：214/0  |  提交时间：2021/07/06
Enhancing IR to NIR upconversion emission in Er3+-sensitized phosphors by adding Yb3+ as a highly efficient NIR-emitting center for photovoltaic applications 期刊论文
CrystEngComm, 2019, 卷号: 22, 期号: 2, 页码: 229-236
作者:  H.Wu;  Z.Hao;  L.Zhang;  X.Zhang;  G.-H.Pan;  Y.Luo;  H.Wu;  H.Zhao
浏览  |  Adobe PDF(3307Kb)  |  收藏  |  浏览/下载：129/48  |  提交时间：2020/08/24
Erbium compounds,Energy transfer,Infrared devices,Light emission,Phosphors,Solar cells,Ytterbium compounds  
Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps 期刊论文
Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873
作者:  K.Jiang;  X.J.Sun;  J.W.Ben;  Z.M.Shi;  Y.P.Jia;  Y.Wu;  C.H.Kai
浏览  |  Adobe PDF(5687Kb)  |  收藏  |  浏览/下载：202/51  |  提交时间：2020/08/24
potential fluctuations,gan films,alxga1-xn,sapphire,quality,localization,relaxation,inversion  
Defect evolution in AlN templates on PVD-AlN-sapphire substrates by thermal annealing 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 32, 页码: 4623-4629
作者:  Ben, J. W.;  Sun, X. J.;  Jia, Y. P.;  Jiang, K.;  Shi, Z. M.;  Liu, H. N.;  Wang, Y.;  Kai, C. H.;  Wu, Y.;  Li, D. B.
浏览  |  Adobe PDF(4418Kb)  |  收藏  |  浏览/下载：415/143  |  提交时间：2019/09/17
light-emitting-diodes  high-quality aln  growth  temperature  sapphire  algan  efficiency  ratio  Chemistry  Crystallography  
Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures 期刊论文
Crystengcomm, 2017, 卷号: 19, 期号: 1
作者:  Li, J. P.;  G. Q. Miao;  Y. G. Zeng;  Z. W. Zhang;  D. B. Li;  H. Song;  H. Jiang;  Y. R. Chen;  X. J. Sun and Z. M. Li
浏览  |  Adobe PDF(1601Kb)  |  收藏  |  浏览/下载：306/107  |  提交时间：2018/06/13