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Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM 期刊论文
Journal of Physics D-Applied Physics, 2020, 卷号: 53, 期号: 23, 页码: 6
作者:  C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li
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Ascorbic Acid-PEI Carbon Dots with Osteogenic Effects as miR-2861 Carriers to Effectively Enhance Bone Regeneration 期刊论文
Acs Applied Materials & Interfaces, 2020, 卷号: 12, 期号: 45, 页码: 50287-50302
作者:  W. H. Bu, X. W. Xu, Z. L. Wang, N. Q. Jin, L. L. Liu, J. Liu, S. J. Zhu, K. Zhang, R. Jelinek, D. Zhou, H. C. Sun and B. Yang
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Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
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Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification 期刊论文
Applied Surface Science, 2020, 卷号: 518, 页码: 7
作者:  B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou
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