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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
浏览  |  Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：161/31  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Experiment of New Protype Group III-nitride UV Image Converter Tube and Evaluation of Detectable Distance of Missile Approach Warning System with It 期刊论文
Binggong Xuebao/Acta Armamentarii, 2017, 卷号: 38, 期号: 5
作者:  Ren, B.;  Z.-T. Jiang;  H. Guo;  F. Shi;  H.-C. Cheng;  X.-F. Bai;  Z.-H. Shen;  X.-B. Yang;  Y. Zhou and M.-H. Cui
浏览  |  Adobe PDF(501Kb)  |  收藏  |  浏览/下载：376/112  |  提交时间：2018/06/13