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Understanding efficiency improvements of betavoltaic batteries based on 4H-SiC, GaN, and diamond 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 10, 页码: 8
作者:  R. Z. Zheng;  J. B. Lu;  Y. Wang;  Z. Y. Chen;  X. Zhang;  X. Y. Li;  L. Liang;  L. Qin;  Y. G. Zeng;  Y. Y. Chen and Y. M. Liu
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Theoretical prediction of output performance of 63NiO-Si heterojunction betavoltaic cell 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 8
作者:  Y. Wang;  R. Zheng;  J. Lu;  X. Li;  Z. Chen;  X. Zhang;  Y. Zhang;  L. Liang;  Y. Zeng;  L. Qin and Y. Liu
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MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 1, 页码: 6
作者:  Q. C. Hou;  K. W. Liu;  D. Y. Han;  Y. X. Zhu;  X. Chen;  B. H. Li;  L. Liu and D. Z. Shen
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Generation of integer and fractional perfect vortex beams using all-dielectric geometrical phase metasurfaces 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 20, 页码: 7
作者:  K. X. Cheng;  Z. X. Liu;  Z. D. Hu;  G. Y. Cao;  J. J. Wu and J. C. Wang
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Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
作者:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben;  Y. Chen;  Z.-H. Zhang;  Y. Jia;  Z. Shi and D. Li
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Performance enhancement of a self-powered solar-blind UV photodetector based on ZnGa2O4/Si heterojunction via interface pyroelectric effect 期刊论文
Applied Physics Letters, 2021, 卷号: 118, 期号: 25
作者:  D. Han;  K. Liu;  X. Chen;  B. Li;  T. Zhai;  L. Liu and D. Shen
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Microfluidics-based quantum dot color conversion layers for full-color micro-LED display 期刊论文
Applied Physics Letters, 2021, 卷号: 118, 期号: 17
作者:  Y. Li;  T. J;  W. Q;  Z. Y;  S. Y;  L. P;  L. J;  Q. Y;  W. W;  Z. Q and L. J
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Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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Ultrabroadband and independent polarization of optical amplification with InGaAs-based indium-rich cluster quantum-confined structure 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 5
作者:  M. Zheng;  Q. N. Yu;  X. Li;  H. X. Tai;  X. Zhang;  J. W. Zhang;  Y. Q. Ning and J. Wu
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