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Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation 期刊论文
Acs Applied Materials & Interfaces, 2022, 卷号: 14, 期号: 33, 页码: 37947-37957
作者:  Y. Chen;  H. Zang;  S. L. Zhang;  Z. M. Shi;  J. W. Ben;  K. Jiang;  Y. P. Jia;  M. R. Liu;  D. B. Li and X. J. Sun
浏览  |  Adobe PDF(9063Kb)  |  收藏  |  浏览/下载：78/32  |  提交时间：2023/06/14
Vivid Structural Color Macropatterns Created by Flexible Nanopainting of Ultrafast Lasers 期刊论文
Acs Applied Materials & Interfaces, 2022, 卷号: 14, 期号: 18, 页码: 21758-21767
作者:  Y. H. Li;  X. Y. Zhang;  T. T. Zou;  Q. Q. Mu and J. J. Yang
浏览  |  Adobe PDF(9926Kb)  |  收藏  |  浏览/下载：83/29  |  提交时间：2023/06/14
Fabrication Optimization of Ultra-Scalable Nanostructured Aluminum-Alloy Surfaces 期刊论文
Acs Applied Materials & Interfaces, 2021, 卷号: 13, 期号: 36, 页码: 43489-43504
作者:  L. N. Li;  Y. K. Lin;  K. F. Rabbi;  J. C. Ma;  Z. Chen;  A. Patel;  W. Su;  X. C. Ma;  K. Boyina;  S. Sett;  D. Mondal;  N. Tomohiro;  F. Hirokazu and N. Miljkovic
浏览  |  Adobe PDF(4200Kb)  |  收藏  |  浏览/下载：137/53  |  提交时间：2022/06/13
Ascorbic Acid-PEI Carbon Dots with Osteogenic Effects as miR-2861 Carriers to Effectively Enhance Bone Regeneration 期刊论文
Acs Applied Materials & Interfaces, 2020, 卷号: 12, 期号: 45, 页码: 50287-50302
作者:  W. H. Bu, X. W. Xu, Z. L. Wang, N. Q. Jin, L. L. Liu, J. Liu, S. J. Zhu, K. Zhang, R. Jelinek, D. Zhou, H. C. Sun and B. Yang
Adobe PDF(4441Kb)  |  收藏  |  浏览/下载：108/34  |  提交时间：2021/07/06
Modulation of Field-Effect Passivation at the Back Electrode Interface Enabling Efficient Kesterite-Type Cu2ZnSn(S,Se)(4) Thin-Film Solar Cells 期刊论文
Acs Applied Materials & Interfaces, 2020, 卷号: 12, 期号: 34, 页码: 38163-38174
作者:  Y. P. Song,H. H. Sun,B. Yao,Y. F. Li,Z. H. Ding,W. Qin,Z. Z. Zhang,L. G. Zhang,H. F. Zhao and D. C. Pan
Adobe PDF(5073Kb)  |  收藏  |  浏览/下载：144/39  |  提交时间：2021/07/06
Two-Dimensional Metal-Polyphthalocyanine Conjugated Porous Frameworks as Promising Optical Limiting Materials 期刊论文
Acs Applied Materials & Interfaces, 2020, 卷号: 12, 期号: 41, 页码: 46565-46570
作者:  T. F. Wang;  W. B. Huang;  T. Sun;  W. X. Zhang;  W. Tang;  L. H. Yan;  J. H. Si and H. P. Ma
Adobe PDF(3123Kb)  |  收藏  |  浏览/下载：113/48  |  提交时间：2021/07/06
Highly Efficient Microcavity Organic Light-Emitting Devices with Narrow-Band Pure UV Emission 期刊论文
Acs Applied Materials & Interfaces, 2020, 卷号: 12, 期号: 9, 页码: 10717-10726
作者:  J. Lin,X. Y. Guo,Y. Lv,X. Y. Liu and Y. Wang
Adobe PDF(4063Kb)  |  收藏  |  浏览/下载：96/37  |  提交时间：2021/07/06
Synergetic Effect of the Surfactant and Silica Coating on the Enhanced Emission and Stability of Perovskite Quantum Dots for Anticounterfeiting 期刊论文
Acs Applied Materials & Interfaces, 2019, 卷号: 11, 期号: 31, 页码: 28013-28022
作者:  F.Zhang;  Z.F.Shi;  S.Li;  Z.Z.Ma;  Y.Li;  L.T.Wang;  D.Wu
浏览  |  Adobe PDF(5592Kb)  |  收藏  |  浏览/下载：221/60  |  提交时间：2020/08/24
Perovskite,quantum dots,surfactant,coating,anticounterfeiting,lead halide perovskites,high-efficiency,cspbx3 x,nanocrystals,luminescent,br,cl,photoluminescence,ligand,acid,Science & Technology - Other Topics,Materials Science  
Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface 期刊论文
Acs Applied Materials & Interfaces, 2019, 卷号: 11, 期号: 35, 页码: 31851-31859
作者:  Y.P.Song;  B.Yao;  Y.F.Li;  Z.H.Ding;  H.H.Sun;  Z.Z.Zhang
浏览  |  Adobe PDF(2313Kb)  |  收藏  |  浏览/下载：175/32  |  提交时间：2020/08/24
Cu2ZnSn(S,Se)(4),solar cells,back surface field,p-MoSe2:Nb,carrier,recombination,shunt resistance,series resistance,recombination,resistance,monolayer,contact,mos2,bsf,Science & Technology - Other Topics,Materials Science  
Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector 期刊论文
Acs Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 50, 页码: 43299-43304
作者:  Yu, M. M.;  Li, H.;  Liu, H.;  Qin, F. L.;  Gao, F.;  Hu, Y. X.;  Dai, M. J.;  Wang, L. F.;  Feng, W.;  Hu, P. A.
浏览  |  Adobe PDF(3276Kb)  |  收藏  |  浏览/下载：347/100  |  提交时间：2019/09/17
Ga0.84In1.86Se  alloy engineering  photodetectors  two-dimensional  materials  III-VI group semiconductors  temperature  gase  inse  deposition  graphene  mobility  growth  films  Science & Technology - Other Topics  Materials Science