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Pressure-induced phase transitions in weak interlayer coupling CdPS3 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 23, 页码: 7
作者:  M. M. Niu;  H. W. Cheng;  X. L. Li;  J. Yu;  X. W. Yang;  Y. Q. Gao;  R. G. Liu;  Y. Cao;  K. Y. He;  X. J. Xie;  Q. Shen;  M. Lu;  L. Wang;  T. T. Yin and J. X. Yan
Adobe PDF(3385Kb)  |  收藏  |  浏览/下载：134/49  |  提交时间：2023/06/14
MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 1, 页码: 6
作者:  Q. C. Hou;  K. W. Liu;  D. Y. Han;  Y. X. Zhu;  X. Chen;  B. H. Li;  L. Liu and D. Z. Shen
Adobe PDF(5122Kb)  |  收藏  |  浏览/下载：102/33  |  提交时间：2023/06/14
Grain boundary-driven magnetism in aluminum nitride 期刊论文
Applied Physics Letters, 2022, 卷号: 36951, 期号: 121, 页码: 24
作者:  Z. Shi;  H. Zang;  X. Ma;  Y. Yang;  K. Jiang;  Y. Chen;  Y. Jia;  X. Sun and D. Li
Adobe PDF(4811Kb)  |  收藏  |  浏览/下载：56/38  |  提交时间：2023/06/14
Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
作者:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben;  Y. Chen;  Z.-H. Zhang;  Y. Jia;  Z. Shi and D. Li
Adobe PDF(2688Kb)  |  收藏  |  浏览/下载：97/34  |  提交时间：2022/06/13
Performance enhancement of a self-powered solar-blind UV photodetector based on ZnGa2O4/Si heterojunction via interface pyroelectric effect 期刊论文
Applied Physics Letters, 2021, 卷号: 118, 期号: 25
作者:  D. Han;  K. Liu;  X. Chen;  B. Li;  T. Zhai;  L. Liu and D. Shen
Adobe PDF(2523Kb)  |  收藏  |  浏览/下载：106/37  |  提交时间：2022/06/13
Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
Adobe PDF(3040Kb)  |  收藏  |  浏览/下载：58/38  |  提交时间：2023/06/14
Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 mu m 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 14, 页码: 4
作者:  X. Li,H. Wang,Z. L. Qiao,J. X. B. Sia,W. J. Wang,X. Guo,Y. Zhang,Z. C. Niu,C. Z. Tong and C. Y. Liu
Adobe PDF(1524Kb)  |  收藏  |  浏览/下载：137/49  |  提交时间：2021/07/06
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
Adobe PDF(2009Kb)  |  收藏  |  浏览/下载：130/44  |  提交时间：2021/07/06
Ultrabroadband and independent polarization of optical amplification with InGaAs-based indium-rich cluster quantum-confined structure 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 5
作者:  M. Zheng;  Q. N. Yu;  X. Li;  H. X. Tai;  X. Zhang;  J. W. Zhang;  Y. Q. Ning and J. Wu
Adobe PDF(1827Kb)  |  收藏  |  浏览/下载：120/46  |  提交时间：2021/07/06
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
Adobe PDF(1823Kb)  |  收藏  |  浏览/下载：107/37  |  提交时间：2021/07/06