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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
浏览  |  Adobe PDF(2009Kb)  |  收藏  |  浏览/下载：130/44  |  提交时间：2021/07/06
Ultrabroadband and independent polarization of optical amplification with InGaAs-based indium-rich cluster quantum-confined structure 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 5
作者:  M. Zheng;  Q. N. Yu;  X. Li;  H. X. Tai;  X. Zhang;  J. W. Zhang;  Y. Q. Ning and J. Wu
Adobe PDF(1827Kb)  |  收藏  |  浏览/下载：120/46  |  提交时间：2021/07/06
High performance planar microcavity organic semiconductor lasers based on thermally evaporated top distributed Bragg reflector 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 15, 页码: 5
作者:  Y. S. Hu,F. Bencheikh,S. Chenais,S. Forget,X. Y. Liu and C. Adachi
Adobe PDF(1577Kb)  |  收藏  |  浏览/下载：118/54  |  提交时间：2021/07/06
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
Adobe PDF(1823Kb)  |  收藏  |  浏览/下载：107/37  |  提交时间：2021/07/06
Maskless laser nano-lithography of glass through sequential activation of multi-threshold ablation 期刊论文
Applied Physics Letters, 2019, 卷号: 114, 期号: 13, 页码: 5
作者:  Y.Z.He;  J.H.Zhang;  S.Singh;  E.Garcell;  A.Y.Vorobyev
Adobe PDF(1301Kb)  |  收藏  |  浏览/下载：136/50  |  提交时间：2020/08/24
femtosecond laser,pattern-formation,surface,metals,Physics  
Transparent perovskite light-emitting diodes by employing organic-inorganic multilayer transparent top electrodes 期刊论文
Applied Physics Letters, 2017, 卷号: 111, 期号: 21
作者:  Liang, J. Q.;  X. Y. Guo;  L. Song;  J. Lin;  Y. S. Hu;  N. Zhang and X. Y. Liu
浏览  |  Adobe PDF(983Kb)  |  收藏  |  浏览/下载：332/104  |  提交时间：2018/06/13
Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism 期刊论文
Applied Physics Letters, 2014, 卷号: 105, 期号: 19, 页码: 5
作者:  Chen Y. R.;  Song H.;  Jiang H.;  Li Z. M.;  Zhang Z. W.;  Sun X. J.;  Li D. B.;  Miao G. Q.
浏览  |  Adobe PDF(1846Kb)  |  收藏  |  浏览/下载：359/98  |  提交时间：2015/04/24
Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors 期刊论文
Applied Physics Letters, 2012, 卷号: 100, 期号: 12
作者:  You K.;  Jiang H.;  Li D. B.;  Sun X. J.;  Song H.;  Chen Y. R.;  Li Z. M.;  Miao G. Q.;  Liu H. B.
Adobe PDF(897Kb)  |  收藏  |  浏览/下载：669/104  |  提交时间：2012/10/21
Manganese-doped indium oxide and its application in organic light-emitting diodes 期刊论文
Applied Physics Letters, 2011, 卷号: 99, 期号: 2
作者:  Liao Y. Q.;  Lu Q. P.;  Fan Y.;  Liu X. Y.
Adobe PDF(975Kb)  |  收藏  |  浏览/下载：553/135  |  提交时间：2012/10/21
Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface 期刊论文
Applied Physics Letters, 2011, 卷号: 98, 期号: 12
作者:  Sun X. J.;  Li D. B.;  Jiang H.;  Li Z. M.;  Song H.;  Chen Y. R.;  Miao G. Q.
Adobe PDF(685Kb)  |  收藏  |  浏览/下载：449/107  |  提交时间：2012/10/21